ABEC,Annular Bearing Engineers Committee,
ABMA,American Bearing Manufacturers Association,
ADC,Analogue-to-Digital Converter,
AGMA,American Gear Manufacturers’ Association,
AHRS,Attitude and Heading Reference Systems,
 AIP,Air Independent Propulsion,
AISI,American Iron and Steel Institute,
ALE,Atomic Layer Epitaxy,
ALU,Arithmetic Logic Unit,
ANSI,American National Standards Institute,
APP,Adjusted Peak Performance,
APU,Auxiliary Power Unit,
ASTM,American Society for Testing and Materials,
ATC,Air Traffic Control,
BJT,Bipolar Junction Transistors,
BPP,Beam Parameter Product,
BSC,Base Station Controller,
CAD,Computer-Aided-Design,
CAS,Chemical Abstracts Service,
CCD,Charge Coupled Device,
CDU,Control and Display Unit,
CEP,Circular Error Probable,
CMM,Coordinate Measuring Machine,
CMOS,Complementary Metal Oxide Semiconductor,
CNTD,Controlled Nucleation Thermal Deposition,
CPLD,Complex Programmable Logic Device,
CPU,Central Processing Unit,
CVD,Chemical Vapour Deposition,
CW,Chemical Warfare,
CW (for lasers),Continuous Wave,
DAC,Digital-to-Analogue Converter,
DANL,Displayed Average Noise Level,
DBRN,Data-Base Referenced Navigation,
DDS,Direct Digital Synthesizer,
DMA,Dynamic Mechanical Analysis,
DME,Distance Measuring Equipment,
DMOSFET,Diffused Metal Oxide Semiconductor Field Effect Transistor,
DS,Directionally Solidified,
EB,Exploding Bridge,
EB-PVD,Electron Beam Physical Vapour Deposition,
EBW,Exploding Bridge Wire,
ECM,Electro-Chemical Machining,
EDM,Electrical Discharge Machines,
EFI,Exploding Foil Initiators,
EIRP,Effective Isotropic Radiated Power,
EMP,Electromagnetic Pulse,
ENOB,Effective Number of Bits,
ERF,Electrorheological Finishing,
ERP,Effective Radiated Power,
ESD,Electrostatic Discharge,
ETO,Emitter Turn-Off Thyristor,
ETT,Electrical Triggering Thyristor,
EU,European Union,
EUV,Extreme Ultraviolet,
FADEC,Full Authority Digital Engine Control,
FFT,Fast Fourier Transform,
FPGA,Field Programmable Gate Array,
FPIC,Field Programmable Interconnect,
FPLA,Field Programmable Logic Array,
FPO,Floating Point Operation,
FWHM,Full-Width Half-Maximum,
GLONASS,Global Navigation Satellite System,
GNSS,Global Navigation Satellite System,
GPS,Global Positioning System,
GSM,Global System for Mobile Communications,
GTO,Gate Turn-off Thyristor,
HBT,Hetero-Bipolar Transistors,
HDMI,High-Definition Multimedia Interface,
HEMT,High Electron Mobility Transistor,
ICAO,International Civil Aviation Organization,
IEC,International Electro-technical Commission,
IED,Improvised Explosive Device,
IEEE,Institute of Electrical and Electronic Engineers,
IFOV,Instantaneous-Field-Of-View,
IGBT,Insulated Gate Bipolar Transistor,
IGCT,Integrated Gate Commutated Thyristor,
IHO,International Hydrographic Organization,
ILS,Instrument Landing System,
IMU,Inertial Measurement Unit,
INS,Inertial Navigation System,
IP,Internet Protocol,
IRS,Inertial Reference System,
IRU,Inertial Reference Unit,
ISA,International Standard Atmosphere,
ISAR,Inverse Synthetic Aperture Radar,
ISO,International Organization for Standardization,
ITU,International Telecommunication Union,
JT,Joule-Thomson,
LIDAR,Light Detection and Ranging,
LIDT,Laser Induced Damage Threshold,
LOA,Length Overall,
LRU,Line Replaceable Unit,
LTT,Light Triggering Thyristor,
MLS,Microwave Landing Systems,
MMIC,Monolithic Microwave Integrated Circuit,
MOCVD,Metal Organic Chemical Vapour Deposition,
MOSFET,Metal-Oxide-Semiconductor Field Effect Transistor,
MPM,Microwave Power Module,
MRF,Magnetorheological Finishing,
MRF,Minimum Resolvable Feature size,
MRI,Magnetic Resonance Imaging,
MTBF,Mean-Time-Between-Failures,
MTTF,Mean-Time-To-Failure,
NA,Numerical Aperture,
NDT,Non-Destructive Test,
NEQ,Net Explosive Quantity,
NIJ,National Institute of Justice,
OAM,Operations, Administration or Maintenance,
OSI,Open Systems Interconnection,
PAI,Polyamide-imides,
PAR,Precision Approach Radar,
PCL,Passive Coherent Location,
PDK,Process Design Kit,
PIN,Personal Identification Number,
PMR,Private Mobile Radio,
PVD,Physical Vapour Deposition,
ppm,parts per million,
QAM,Quadrature-Amplitude-Modulation,
QE,Quantum Efficiency,
RAP,Reactive Atom Plasmas,
RF,Radio Frequency,
rms,Root Mean Square,
RNC,Radio Network Controller,
RNSS,Regional Navigation Satellite System,
ROIC,Read-out Integrated Circuit,
S-FIL,Step and Flash Imprint Lithography,
SAR,Synthetic Aperture Radar,
SAS,Synthetic Aperture Sonar,
SC,Single Crystal,
SCR,Silicon Controlled Rectifier,
SFDR,Spurious Free Dynamic Range,
SHPL,Super High Powered Laser,
SLAR,Sidelooking Airborne Radar,
SOI,Silicon-on-Insulator,
SQUID,Superconducting Quantum Interference Device,
SRA,Shop Replaceable Assembly,
SRAM,Static Random Access Memory,
SSB,Single Sideband,
SSR,Secondary Surveillance Radar,
SSS,Side Scan Sonar,
TIR,Total Indicated Reading,
TVR,Transmitting Voltage Response,
u,Atomic Mass Unit,
UPR,Unidirectional Positioning Repeatability,
UV,Ultraviolet,
UTS,Ultimate Tensile Strength,
VJFET,Vertical Junction Field Effect Transistor,
VOR,Very High Frequency Omni-directional Range,
WHO,World Health Organization,
WLAN,Wireless Local Area Network,
Technical Notes: For the purposes of 1C513 :,
1.,'High-entropy alloys' are alloys having at least 5 principal metallic elements, each having concentration within the range of 5 to 35 atomic percent, from the following list: Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Hf, Ta or W.,
2.,'Inoculants' are additives that promote grain nucleation and increase the total area of grain boundaries to inhibit solidification defects.,
3.,‘Refractory metals and alloys' are metals and alloys of niobium, molybdenum, tungsten and tantalum.,
,a.,Having at least one of the following consolidation sources:,
,,1.,“ Lasers ”;,
,,2.,Electron beam; or,
,,3.,Electric arc;,
,b.,Having a controlled process atmosphere of any of the following:,
,,1.,Inert gas; or,
,,2.,Vacuum (equal to or less than 100 Pa);,
,c.,Having any of the following 'in-process monitoring' equipment in a 'coaxial configuration' or 'paraxial configuration':,
,,1.,Imaging camera with a peak response in the wavelength range exceeding 380 nm but not exceeding 14 000 nm;,
,,2.,Pyrometer designed to measure temperatures greater than 1 273,15 K (1 000°C); or,
,,3.,Radiometer or spectrometer with a peak response in the wavelength range exceeding 380 nm but not exceeding 3 000 nm; and,
,d.,A closed loop control system designed to modify the consolidation source parameters, build path, or equipment settings during the build cycle in response to feedback from 'in-process monitoring' equipment specified in 2B510.c.,
Technical Notes: For the purposes of 2B510:,
1.,'In-process monitoring', also known as in-situ process monitoring, pertains to the observation and measurement of the additive manufacturing process including electromagnetic or thermal emissions from the melt pool.,
2.,'Co-axial configuration', also known as on-axis or inline configuration, pertains to one or more sensors that are mounted in an optical path shared by the “laser” consolidation source.,
3.,'Paraxial configuration' pertains to one or more sensors that are physically mounted onto or integrated into the “laser”, electron beam or electric arc consolidation source component.,
4.,For both 'co-axial configuration' and 'paraxial configuration', the field of view of the sensor(s) is fixed to the moving reference frame of the consolidation source and moves in the same scan trajectories of the consolidation source throughout the build process.,
The numbers in parenthesis refer to the Notes following this Table.,

A. Chemical Vapour Deposition (CVD),"Superalloys",Aluminides for internal passages,
,Ceramics (19) and Low expansion glasses (14),Silicides Carbides Dielectric layers (15) Diamond Diamond-like carbon (17),
,Carbon-carbon, Ceramic and Metal "matrix""composites",Silicides Carbides Refractory metals Mixtures thereof (4) Dielectric layers (15) Aluminides Alloyed aluminides (2) Boron nitride,
,Cemented tungsten carbide (16), Silicon carbide (18),Carbides Tungsten Mixtures thereof (4) Dielectric layers (15),
,Molybdenum and Molybdenum alloys,Dielectric layers (15),
,Beryllium and Beryllium alloys,Dielectric layers (15) Diamond Diamond-like carbon (17),
,Sensor window materials (9),Dielectric layers (15) Diamond Diamond-like carbon (17),
B. Thermal-Evaporation Physical Vapour Deposition (TE-PVD),,,
B1. Physical Vapour Deposition (PVD): Electron-Beam (EB-PVD),"Superalloys",Alloyed silicides Alloyed aluminides (2) MCrAlX (5) Modified zirconia (12) Silicides Aluminides Mixtures thereof (4),
,Ceramics (19) and Low expansion glasses (14),Dielectric layers (15),
,Corrosion resistant steel (7),MCrAlX (5) Modified zirconia (12) Mixtures thereof (4),
,Carbon-carbon, Ceramic and Metal "matrix""composites",Silicides Carbides Refractory metals Mixtures thereof (4) Dielectric layers (15) Boron nitride,
,Cemented tungsten carbide (16), Silicon carbide (18),Carbides Tungsten Mixtures thereof (4) Dielectric layers (15),
,Molybdenum and Molybdenum alloys,Dielectric layers (15),
,Beryllium and Beryllium alloys,Dielectric layers (15) Borides Beryllium,
,Sensor window materials (9),Dielectric layers (15),
,Titanium alloys (13),Borides Nitrides,
B.2. Ion assisted resistive heating Physical Vapour Deposition (PVD) (Ion Plating),Ceramics (19) and Low-expansion glasses,Dielectric layers (15) Diamond-like carbon (17),
,Carbon-carbon, Ceramic and Metal "matrix""composites",Dielectric layers (15),
,Cemented tungsten carbide (16), Silicon carbide,Dielectric layers (15),
,Molybdenum and Molybdenum alloys,Dielectric layers (15),
,Beryllium and Beryllium alloys,Dielectric layers (15),
,Sensor window materials (9),Dielectric layers (15) Diamond-like carbon (17),
B.3. Physical Vapour Deposition (PVD): "Laser" Vaporization,Ceramics (19) and Low expansion glasses (14),Silicides Dielectric layers (15) Diamond-like carbon (17),
,Carbon-carbon, Ceramic and Metal "matrix""composites",Dielectric layers (15),
,Cemented tungsten carbide (16), Silicon carbide,Dielectric layers (15),
,Molybdenum and Molybdenum alloys,Dielectric layers (15),
,Beryllium and Beryllium alloys,Dielectric layers (15),
,Sensor window materials (9),Dielectric layers (15) Diamond-like carbon (17),
B.4. Physical Vapour Deposition (PVD): Cathodic Arc Discharge,"Superalloys",Alloyed silicides Alloyed aluminides (2) MCrAlX (5),
,Polymers (11) and Organic "matrix""composites",Borides Carbides Nitrides Diamond-like carbon (17),
C. Pack cementation (see A above for out-of-pack cementation) (10),Carbon-carbon, Ceramic and Metal "matrix""composites",Silicides Carbides Mixtures thereof (4),
,Titanium alloys (13),Silicides Aluminides Alloyed aluminides (2),
,Refractory metals and alloys (8),Silicides Oxides,
D. Plasma spraying,"Superalloys",MCrAlX (5) Modified zirconia (12) Mixtures thereof (4) Abradable Nickel-Graphite Abradable materials containing Ni-Cr-Al Abradable Al-Si-Polyester Alloyed aluminides (2),
,Aluminium alloys (6),MCrAlX (5) Modified zirconia (12) Silicides Mixtures thereof (4),
,Refractory metals and alloys (8),Aluminides Silicides Carbides,
,Corrosion resistant steel (7),MCrAlX (5) Modified zirconia (12) Mixtures thereof (4),
,Titanium alloys (13),Carbides Aluminides Silicides Alloyed aluminides (2) Abradable Nickel-Graphite Abradable materials containing Ni-Cr-Al Abradable Al-Si-Polyester,
E. Slurry Deposition,Refractory metals and alloys (8),Fused silicides Fused aluminides except for resistance heating elements,
,Carbon-carbon, Ceramic and Metal "matrix""composites",Silicides Carbides Mixtures thereof (4),
F. Sputter Deposition,"Superalloys",Alloyed silicides Alloyed aluminides (2) Noble metal modified aluminides (3) MCrAlX (5) Modified zirconia (12) Platinum Mixtures thereof (4),
,Ceramics and Low- expansion glasses (14),Silicides Platinum Mixtures thereof (4) Dielectic layers (15) Diamond-like carbon (17),
,Titanium alloys (13),Borides Nitrides Oxides Silicides Aluminides Alloyed aluminides (2) Carbides,
,Carbon-carbon, Ceramic and Metal "matrix""composites",Silicides Carbides Refractory metals Mixtures thereof (4) Dielectric layers (15) Boron nitride,
,Cemented tungsten carbide (16), Silicon carbide (18),Carbides Tungsten Mixtures thereof (4) Dielectric layers (15) Boron nitride,
,Molybdenum and Molybdenum alloys,Dielectric layers (15),
,Beryllium and Beryllium alloys,Borides Dielectric layers (15) Beryllium,
,Sensor window materials (9),Dielectric layers (15) Diamond-like carbon (17),
,Refractory metals and alloys (8),Aluminides Silicides Oxides Carbides,
G. Ion Implantation,High temperature bearing steels,Additions of Chromium Tantalum or Niobium (Columbium),
,Titanium alloys (13),Borides Nitrides,
,Beryllium and Beryllium alloys,Borides,
,Cemented tungsten carbide (16),Carbides Nitrides,
,g.,“Technology”, not specified elsewhere, for the “development” or “production” of ‘coating systems’ having all of the following:,
,,1.,Designed to protect ceramic “matrix” “composite” materials specified in 1C007 from corrosion; and,
,,2.,Designed to operate at temperatures exceeding 1 373,15 K (1 100°C).,
,Technical Note: For the purposes of 2E503.g.,‘coating systems’ consist of one or more layers (e.g., bond, interlayer, top coat) of material deposited on the substrate.,
,a.,General purpose integrated circuits, as follows:,
,,15.,Complementary Metal Oxide Semiconductor (CMOS) integrated circuits, not specified in 3A001.a.2., designed to operate at an ambient temperature equal to or less (better) than 4,5 K (-268,65°C).,
,,,Technical Note: For the purposes of 3A501.a.15., CMOS integrated circuits are also referred to as cryogenic CMOS or cryoCMOS integrated circuits.,
,,16.,Integrated circuits having one or more digital processing units having a 'Total Processing Performance' ('TPP') of 6 000 or more.,
,,,N.B.: For “digital computers” and “electronic assemblies” containing integrated circuits specified in 3A501.a.16., see 4A507.,
,,,Technical Notes: For the purposes of 3A501.a.16.:,
,,,1.,'Total processing performance' ('TPP') is 2 x 'MacTOPS' x 'bit length of the operation', aggregated over all processing units on the integrated circuit.,
,,,,a.,'MacTOPS' is the theoretical peak number of tera (10 12 ) operations per second for multiply-accumulate computation, D=AxB+C).,
,,,,b.,The 2 in the 'TPP' formula is based on the industry convention of counting one multiply-accumulate computation, D=AxB+C, as 2 operations for the purpose of datasheets. Therefore, 2 x MacTOPS may correspond to the reported TOPS or FLOPS on a datasheet.,
,,,,c.,'Bit length of the operation' for a multiply-accumulate computation is the largest bit-length of the inputs to the multiply operation.,
,,,,d.,Aggregate the TPPs for each processing unit on the integrated circuit to arrive at a total. 'TPP' = TPP1 + TPP2 +… + TPPn (where n is the number of processing units on the integrated circuit).,
,,,2.,The rate of 'MacTOPS' is to be calculated at its maximum value theoretically possible. The rate of 'MacTOPS' is assumed to be the highest value the manufacturer claims in a manual or brochure for the integrated circuit. For example, the 'TPP' threshold of 6 000 can be met with 750 tera integer operations (or 2 x 375 'MacTOPS') at 8 bits or 300 tera FLOPS (or 2 x 150 'MacTOPS') at 16 bits. If the IC is designed for MAC computation with multiple bit lengths that achieve different 'TPP' values, the highest 'TPP' value should be evaluated against parameters in 3A501.a.16.,
,,,3.,For integrated circuits, specified in 3A501.a.16., that provide processing of both sparse and dense matrices, the 'TPP' values are the values for processing of dense matrices (e.g., without sparsity).,
,b.,Microwave or millimetre wave items as follows:,
,,13.,Parametric signal amplifiers having all of the following:,
,,,a.,Designed for operation at an ambient temperature below 1 K (-272,15ºC);,
,,,b.,Designed for operation at any frequency from 2 GHz up to and including 15 GHz; and,
,,,c.,A noise figure less (better) than 0,015 dB at any frequency from 2 GHz up to and including 15 GHz at 1 K (-272,15ºC);,
,,,Note: Parametric signal amplifiers include Travelling Wave Parametric Amplifiers (TWPAs).,
,,,Technical Note: For the purposes of 3A501.b.13., parametric signal amplifiers may also be referred to as Quantum-Limited Amplifiers (QLAs).,
,i.,“Electronic assemblies”, modules or equipment, containing one or more 'user configurable' Field Programmable Logic Devices (FPLDs) and having an ‘aggregate lookup table input count' of greater than or equal to 1 800 000.,
,,N.B.: For items having FPLDs that are combined with an Analogue-to-Digital Converter (ADC), rated for extended operating temperatures or are radiation hardened, or have cryptographic functionality, see 3A002.h., 4A001.a., and 5A002.a. respectively.,
,,Technical Notes: For the purposes of 3A502.i.:,
,,1.,'User configurable' means a user can configure or modify the logic cells or interconnects between logic cells within the FPLD logic fabric to prescribe the specific function that the 3A502.i. item performs.,
,,2.,'Aggregate lookup table input count' is the sum of the number of independent inputs available to each programmable Lookup Table (LUT), as accumulated across all physical LUTs contained within a FPLD or other programmable item. An example is: a circuit board containing 2 FPGAs, each having 150 000 programmable LUTs with 6 inputs, would have an 'aggregate lookup table input count' of 2 x 150 000 x 6 = 1 800 000.,
,a.,Systems rated to provide a cooling power greater than or equal to 600 μW at or below a temperature of 0,1 K (-273,05°C) for a period of greater than 48 hours;,
,b.,Two-stage pulse tube cryocoolers rated to maintain a temperature below 4 K (-269,15°C) and provide a cooling power greater than or equal to 1,5 W at or below a temperature of 4,2 K (-268,95°C).,
3B501,Equipment for the manufacturing of semiconductor devices or materials, as follows and specially designed components and accessories therefor:,
,a.,Equipment designed for epitaxial growth as follows:,
,,1.,Not used;,
,,2.,Not used;,
,,3.,Not used;,
,,4.,Equipment designed for epitaxial growth of silicon (Si) or silicon germanium (SiGe), and having all of the following:,
,,,a.,At least one preclean chamber designed to provide a surface preparation means to clean the surface of the wafer; and,
,,,b.,An epitaxial deposition chamber designed to operate at a temperature below 958 K (685°C);,
,,Note: 3B501.a.4. includes Atomic Layer Epitaxy (ALE) equipment.,
,b.,Not used;,
,c.,Not used;,
,d.,Not used;,
,e.,Not used;,
,f.,Lithography equipment as follows:,
,,1.,Align and expose step and repeat (direct step on wafer) or step and scan (scanner) lithography equipment for wafer processing, not specified in 3B001.f., using photo-optical or X-ray methods, and having any of the following:,
,,,a.,A light source wavelength shorter than 193 nm; or,
,,,b.,Having all of the following:,
,,,,1.,A light source wavelength equal to or longer than 193 nm;,
,,,,2.,Capable of producing a pattern with a 'Minimum Resolvable Feature size' ('MRF') of 45 nm or less; and,
,,,,3.,A maximum 'dedicated chuck overlay' value of less than or equal to 1,5 nm;,
,,Technical Notes: For the purposes of 3B501.f.1.b.:,
,,1.,The 'Minimum Resolvable Feature size' ('MRF') is calculated by the following formula: ' M R F '   =   ( a n   e x p o s u r e   l i g h t   s o u r c e   w a v e l e n g t h   i n   n m )   ×   ( K   f a c t o r ) m a x i m u m   n u m e r i c a l   a p e r t u r e,
,,,where the K factor = 0,25 'MRF' is also known as resolution.,
,,2.,'Dedicated chuck overlay' is the alignment accuracy of a new pattern to an existing pattern printed on a wafer by the same lithographic system. 'Dedicated chuck overlay' is also known as single machine overlay.,
,,N.B.: SEE ALSO 3B001.f.1.,
,g.,Not used;,
,h.,Not used;,
,i.,Not used;,
,j.,Not used;,
,k.,Equipment designed for dry etching having any of the following:,
,,1.,Equipment designed or modified for isotropic dry etching, having a largest 'silicon germanium-to-silicon (SiGe:Si) etch selectivity' of greater than or equal to 100:1; or,
,,2.,Equipment designed or modified for anisotropic dry etching, having all of the following:,
,,,a.,Radio Frequency (RF) power source(s) with at least one pulsed RF output;,
,,,b.,One or more fast gas switching valve(s) with switching time less than 300 ms; and,
,,,c.,Electrostatic chuck with 20 or more individually controllable variable temperature elements;,
,,Note 1.: 3B501.k. includes etching by 'radicals', ions, sequential reactions or non-sequential reactions.,
,,Note 2.: 3B501.k. includes etching using RF pulse excited plasma, pulsed duty cycle excited plasma, pulsed voltage on electrodes modified plasma, cyclic injection and purging of gases combined with a plasma, plasma atomic layer etching or plasma quasiatomic layer etching.,
,,Technical Notes: For the purposes of 3B501.k.:,
,,1.,'Silicon germanium-to-silicon (SiGe:Si) etch selectivity' is measured for a Ge concentration of greater than or equal to 30% (Si 0,7 Ge 0,3 ).,
,,2.,'Radical' is defined as an atom, molecule or ion that has an unpaired electron in an open electron shell configuration.,
,l.,'Extreme Ultraviolet' ('EUV') masks and 'EUV' reticles, designed for integrated circuits, not specified in 3B001.g., and having a mask “substrate blank” specified in 3B001.j.;,
,,Technical Notes:,
,,1.,For the purposes of 3B501.l., masks or reticles with a mounted pellicle are considered masks and reticles.,
,,2.,For the purposes of 3B501.l., 'Extreme Ultraviolet' ('EUV') means electromagnetic spectrum wavelengths greater than 5 nm and less than 124 nm.,
,m.,'Pellicles' specially designed for 'Extreme Ultraviolet' ('EUV') lithography;,
,,Technical Notes:,
,,1.,For the purposes of 3B501.m., a 'pellicle' is a membrane integrated with a frame, designed to protect a mask or reticle from particle contamination.,
,,2.,For the purposes of 3B501.m., 'Extreme Ultraviolet' ('EUV') means electromagnetic spectrum wavelengths greater than 5 nm and less than 124 nm.,
,n.,Semiconductor manufacturing deposition equipment as follows:,
,,1.,Atomic Layer Deposition (ALD) equipment as follows:,
,,,a.,Equipment designed for the deposition of tungsten to fill an entire interconnect or in a channel less than 40 nm wide;,
,,,b.,Equipment designed for 'area selective deposition' of a metal or metal nitride sidewall barrier using an organometallic compound precursor;,
,,,,Technical Note: For the purposes of 3B501.n.1.b., 'area selective deposition' refers to the deposition of material on the sidewall but not the bottom of a feature.,
,,,c.,Equipment designed for the deposition of a 'work function metal' composed of titanium aluminium carbide (TiAlC) and having a work function greater than 4 eV, and having all of the following:,
,,,,1.,More than one metal source of which one is functioning as an aluminium precursor source; and,
,,,,2.,A precursor vessel designed to operate at a temperature greater than or equal to 303,15 K (30℃);,
,,,,Technical Note: For the purposes of 3B501.n.1.c., 'work function metal' is a material that controls the threshold voltage of a transistor.,
,,2.,Equipment designed for cobalt electroplating or cobalt electroless-plating deposition processes;,
,,3.,Equipment designed for Chemical Vapour Deposition (CVD) of cobalt fill metal;,
,,4.,Equipment designed for 'selective bottom-up' Chemical Vapour Deposition (CVD) of tungsten fill metal;,
,,,Technical Note: For the purposes of 3B501.n.4., ‘selective bottom-up’ refers to the preferential deposition of material on the bottom relative to the sidewall.,
,,5.,Equipment designed for void-free plasma enhanced deposition of a layer with a dielectric constant less than 3,3, in 'gaps' having an 'aspect ratio' equal to or greater than 1:1 and a width less than 25 nm;,
,,,Technical Notes: For the purposes of 3B501.n.5.:,
,,,1.,A 'gap' is the space between metal lines.,
,,,2.,The 'aspect ratio' (depth : width) is defined as the ratio of the depth to the width of the gap between the metal lines.,
,,6.,Equipment designed for the deposition of a ruthenium layer using an organometallic compound precursor, while maintaining the wafer substrate at a temperature greater than 293,15 K (20°C) and less than 773,15 K (500°C);,
,,7.,Equipment designed for multistep processing in multiple chambers and maintaining high vacuum or inert environment during transfer between process steps, as follows:,
,,,a.,Equipment designed to fabricate a metal contact by performing all of the following processes:,
,,,,1.,Surface treatment plasma process using hydrogen, hydrogen and nitrogen, or ammonia, while maintaining the wafer substrate at a temperature greater than 373,15 K (100°C) and less than 773,15 K (500°C);,
,,,,2.,Surface treatment plasma process using oxygen or ozone, while maintaining the wafer substrate at a temperature greater than 313,15 K (40°C) and less than 773,15 K (500°C); and,
,,,,3.,Deposition of a tungsten layer while maintaining the wafer substrate at a temperature greater than 373,15 K (100°C) and less than 773,15 K (500°C);,
,,,b.,Equipment designed to fabricate a metal contact by performing all of the following processes:,
,,,,1.,Surface treatment plasma process using a remote plasma generator and an ion filter; and,
,,,,2.,Deposition of a cobalt layer selectively onto copper using an organometallic compound precursor;,
,,,c.,Equipment designed to fabricate a metal contact by performing all of the following processes:,
,,,,1.,Deposition of a titanium nitride or tungsten carbide layer, using an organometallic compound precursor, while maintaining the wafer substrate at a temperature greater than 293,15 K (20°C) and less than 773,15 K (500°C);,
,,,,2.,Deposition of a cobalt layer using a physical sputter deposition technique and having a process pressure greater than 1,33x10 -1 Pa (1 mTorr) and less than 1,33x10 1 Pa (100 mTorr), while maintaining the wafer substrate at temperature less than 773,15 K (500°C); and,
,,,,3.,Deposition of a cobalt layer using an organometallic compound precursor and having a process pressure greater than 1,33x10 2 Pa (1 Torr) and less than 1,33x10 4 Pa (100 Torr), while maintaining the wafer substrate at temperature greater than 293,15 K (20°C) and less than 773,15 K (500°C);,
,,,d.,Equipment designed to fabricate copper interconnects by performing all of the following processes:,
,,,,1.,Deposition of a cobalt or ruthenium layer using an organometallic compound precursor and having a process pressure greater than 1,33x10 2 Pa (1 Torr) and less than 1,33x10 4 Pa (100 Torr), while maintaining the wafer substrate at a temperature greater than 293,15 K (20°C) and less than 773,15 K (500°C); and,
,,,,2.,Deposition of a copper layer using a physical vapour deposition technique having a process pressure greater than 1,33x10 -1 Pa (1 mTorr) and less than 1,33x10 1 Pa (100 mTorr), while maintaining the wafer substrate at a temperature less than 773,15 K (500°C);,
,,8.,Equipment designed to fabricate a metal contact by multistep processing within a single chamber by performing all of the following:,
,,,a.,Deposition of a tungsten layer, using an organometallic compound precursor, while maintaining the wafer substrate temperature greater than 373,15 K (100°C) and less than 773,15 K (500°C); and,
,,,b.,Surface treatment plasma process using hydrogen, hydrogen and nitrogen, or ammonia (NH 3 ).,
,a.,Stage placement accuracy less (better) than 30 nm;,
,b.,Stage positioning measurement performed using laser interferometry;,
,c.,Position calibration within a Field-Of-View (FOV) based on laser interferometer length-scale measurement;,
,d.,Collection and storage of images having more than 2 x 10 8 pixels;,
,e.,FOV overlap of less than 5% in vertical and horizontal directions;,
,f.,Stitching overlap of FOV less than 50 nm; and,
,g.,Accelerating voltage more than 21 kV;,
Note 1.: 3B503 includes SEM equipment designed for chip design recovery.,
Note 2.: 3B503 does not control SEM equipment designed to accept a Semiconductor Equipment and Materials International (SEMI) standard wafer carrier, such as a 200 mm or larger Front Opening Unified Pod (FOUP).,
,a.,Designed to test devices at temperatures less than or equal to 4,5 K (-268,65°C); and,
,b.,Designed to accommodate wafer diameters greater than or equal to 100 mm.,
,a.,Silicon having an isotopic impurity less than 0,08% of silicon isotopes other than silicon-28 or silicon-30; or,
,b.,Germanium having an isotopic impurity less than 0,08% of germanium isotopes other than germanium-70, germanium-72, germanium-74, or germanium-76.,
,a.,Silicon having an isotopic impurity less than 0,08% of silicon isotopes other than silicon-28 or silicon-30; or,
,b.,Germanium having an isotopic impurity less than 0,08% of germanium isotopes other than germanium-70, germanium-72, germanium-74, or germanium-76.,
,a.,Silicon having an isotopic impurity less than 0,08% of silicon isotopes other than silicon-28 or silicon-30; or,
,b.,Germanium having an isotopic impurity less than 0,08% of germanium isotopes other than germanium-70, germanium-72, germanium-74, or germanium-76.,
Note: 3C509 includes “substrates”, lumps, ingots, boules and preforms.,
Technical Note: For the purposes of 3D507, ‘GDSII’ (‘Graphic Design System II’) is a database file format for data exchange of integrated circuit artwork or integrated circuit layout artwork.,
Note 1.: 3E505 includes ‘process recipes’.,
Note 2.: 3E505 does not control tool qualification or maintenance.,
Note 3.: 3E505 does not control ‘Process Design Kits’ (‘PDKs’) unless they include libraries implementing functions or technologies for items specified in 3A001 or 3A501.,
Technical Notes:,
1.,For the purposes of 3E505, a ‘process recipe’ is a set of conditions and parameters for a particular process step.,
2.,For the purposes 3E505, a ‘Process Design Kit’ (‘PDK’) is a software tool provided by a semiconductor manufacturer to ensure that the required design practices and rules are taken into account in order to successfully produce a specific integrated circuit design in a specific semiconductor process, in accordance with technological and manufacturing constraints (each semiconductor manufacturing process has its particular ‘PDK’).,
a.,Total Dose,5 × 10 3 Gy (silicon);,
b.,Dose Rate Upset,5 × 10 6 Gy (silicon)/s; or,
c.,Single Event Upset,1 × 10 –8 Error/bit/day;,
,a.,Quantum computers as follows:,
,,1.,Quantum computers supporting 34 or more, but fewer than 100, ‘fully controlled’, ‘connected’ and ‘working’ ‘physical qubits’, and having a 'C-NOT error' of less than or equal to 10 -4 ;,
,,2.,Quantum computers supporting 100 or more, but fewer than 200, ‘fully controlled’, ‘connected’ and ‘working’ ‘physical qubits’, and having a ‘C-NOT error’ of less than or equal to 10 -3 ;,
,,3.,Quantum computers supporting 200 or more, but fewer than 350, ‘fully controlled’, ‘connected’ and ‘working’ ‘physical qubits’, and having a ‘C-NOT error’ of less than or equal to 2 x10 -3 ;,
,,4.,Quantum computers supporting 350 or more, but fewer than 500, ‘fully controlled’, ‘connected’ and ‘working’ ‘physical qubits’, and having a ‘C-NOT error’ of less than or equal to 3 x10 -3 ;,
,,5.,Quantum computers supporting 500 or more, but fewer than 700, ‘fully controlled’, ‘connected’ and ‘working’ ‘physical’, and having a ‘C-NOT error’ of less than or equal to 4 x 10 -3 ;,
,,6.,Quantum computers supporting 700 or more, but fewer than 1 100, ‘fully controlled’, ‘connected’ and ‘working’ ‘physical qubits’, and having a ‘C-NOT error’ of less than or equal to 5 x 10 -3 ;,
,,7.,Quantum computers supporting 1 100 or more, but fewer than 2 000, ‘fully controlled’, ‘connected’ and ‘working’ ‘physical qubits’, and having a ‘C-NOT error’ of less than or equal to 6 x 10 -3 ;,
,,8.,Quantum computers supporting 2 000 or more ‘fully controlled’, ‘connected’ and ‘working’ ‘physical qubits’;,
,b.,Qubit devices and qubit circuits, containing or supporting arrays of ‘physical qubits’, and specially designed for items specified in 4A506.a.;,
,c.,Quantum control components and quantum measurement devices, specially designed for items specified in 4A506.a.;,
Note 1.: 4A506 controls circuit model (or gate-based) and one-way (or measurement-based) quantum computers. This entry does not apply to adiabatic (or annealing) quantum computers.,
Note 2.: Items specified in 4A506 may not necessarily physically contain any qubits. For example, quantum computers based on photonic schemes do not permanently contain a physical item that can be identified as a qubit. Instead, the photonic qubits are generated while the computer is operating and then later discarded.,
Note 3.: Items specified in 4A506.b. include semiconductor, superconducting, and photonic qubit chips and chip arrays; surface ion trap arrays; other qubit confinement technologies; and coherent interconnects between such items.,
Note 4.: 4A506.c. controls items designed for calibrating, initialising, manipulating or measuring the resident qubits of a quantum computer.,
Technical Notes: For the purposes of 4A506:,
1.,A ‘physical qubit’ is a two-level quantum system used to represent the elementary unit of quantum logic by means of manipulations and measurements that are not error corrected. ‘Physical qubits’ are distinguished from logical qubits, in that logical qubits are error corrected qubits comprised of many ‘physical qubits’.,
2.,‘Fully controlled’ means the ‘physical qubit’ can be calibrated, initialised, gated, and read out, as necessary.,
3.,‘Connected’ means that two-qubit gate operations can be performed between any arbitrary pair of the available ‘working’ ‘physical qubits’. This does not necessarily entail all-to-all connectivity.,
4.,‘Working’ means that the ‘physical qubit’ performs universal quantum computational work according to the system specifications for qubit operational fidelity.,
5.,Supporting 34 or more ‘fully controlled’, ‘connected’, ‘working’ ‘physical qubits’ refers to the capability of a quantum computer to confine, control, measure and process the quantum information embodied in 34 or more ‘physical qubits’.,
6.,‘C-NOT error’ is the average physical gate error for the nearest neighbour two-’physical qubit’ Controlled-NOT (C-NOT) gates.,
1C001,Materials specially designed for absorbing electromagnetic radiations, or intrinsically conductive polymers. N.B. SEE ALSO 1C101,
1C101,Materials and devices for reduced observables such as radar reflectivity, ultraviolet/infrared signatures and acoustic signatures, other than those specified in 1C001, usable in ‘missiles’, ‘missile’ subsystems or unmanned aerial vehicles specified in 9A012. Note: 1C101 does not control materials if such goods are formulated solely for civil applications. Technical Note: In 1C101 ‘ missiles ’ means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km.,
1D103,‘ Software ’ specially designed for analysis of reduced observables such as radar reflectivity, ultraviolet/infrared signatures and acoustic signatures.,
1E101,‘ Technology ’ according to the GTN for the ‘ use ’ of goods specified in 1C101 or 1D103.,
1E102,‘ Technology ’ according to the GTN for the ‘ development ’ of ‘ software ’ specified in 1D103.,
6B008,Pulse radar cross-section measurement systems having transmit pulse widths of 100 ns or less and specially designed components therefor. N.B. SEE ALSO 6B108,
6B108,Systems specially designed for radar cross section measurement usable for ‘missiles’ and their subsystems. Technical Note: In 6B108 ‘ missile ’ means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km.,
1A007,Equipment and devices, specially designed to initiate charges and devices containing ‘energetic materials’, by electrical means, as follows: N.B. SEE ALSO MILITARY GOODS CONTROLS, 3A229 AND 3A232. Explosive detonator firing sets designed to drive multiple controlled detonators specified in 1A007.b. below ; Electrically driven explosive detonators as follows: Exploding bridge (EB); Exploding bridge wire (EBW); Slapper; Exploding foil initiators (EFI). Note: 1A007.b. does not control detonators using only primary explosives, such as lead azide.,
1C239,High explosives, other than those specified in the Military Goods Controls, or substances or mixtures containing more than 2 % by weight thereof, with a crystal density greater than 1,8 g/cm 3 and having a detonation velocity greater than 8 000  m/s.,
1E201,‘ Technology ’ according to the General Technology Note for the ‘ use ’ of goods specified in 1C239.,
3A229,High-current pulse generators, as follows … N.B. SEE ALSO MILITARY GOODS CONTROLS,
3A232,Multipoint initiation systems, other than those specified in 1A007 above , as follows… N.B. SEE ALSO MILITARY GOODS CONTROLS,
3E201,‘ Technology ’ according to the General Technology Note for the ‘ use ’ of equipment specified in 3A229 or 3A232.,
6A001,Acoustics, limited to the following:,
6A001.a.1.b.,Object detection or location systems, having any of the following: A transmitting frequency below 5 kHz ; Designed to withstand …;,
6A001.a.2.a.2.,Hydrophones … Incorporating …,
6A001.a.2.a.3.,Hydrophones … Having any …,
6A001.a.2.a.6.,Hydrophones … Designed for …,
6A001.a.2.b.,Towed acoustic hydrophone arrays …,
6A001.a.2.c.,Processing equipment, specially designed for real time application with towed acoustic hydrophone arrays, having ‘user-accessible programmability’ and time or frequency domain processing and correlation, including spectral analysis, digital filtering and beamforming using Fast Fourier or other transforms or processes;,
6A001.a.2.e.,Bottom or bay-cable hydrophone arrays, having any of the following: Incorporating hydrophones …, or Incorporating multiplexed hydrophone group signal modules …;,
6A001.a.2.f.,Processing equipment, specially designed for real time application with bottom or bay cable systems, having ‘user-accessible programmability’ and time or frequency domain processing and correlation, including spectral analysis, digital filtering and beamforming using Fast Fourier or other transforms or processes;,
6D003.a.,‘ Software ’ for the ‘ real-time processing ’ of acoustic data;,
8A002.o.3.,Noise reduction systems designed for use on vessels of 1 000 tonnes displacement or more, as follows: ‘Active noise reduction or cancellation systems’, or magnetic bearings, specially designed for power transmission systems, and incorporating electronic control systems capable of actively reducing equipment vibration by the generation of anti-noise or anti-vibration signals directly to the source; Technical Note: ‘ Active noise reduction or cancellation systems ’ incorporate electronic control systems capable of actively reducing equipment vibration by the generation of anti-noise or anti-vibration signals directly to the source.,
8E002.a.,‘ Technology ’ for the ‘ development ’ , ‘ production ’ , repair, overhaul or refurbishing (re-machining) of propellers specially designed for underwater noise reduction.,
5A004.a.,Equipment designed or modified to perform ‘cryptanalytic functions’. Note: 5A004.a. includes systems or equipment, designed or modified to perform ‘ cryptanalytic functions ’ by means of reverse engineering. Technical Note: ‘ Cryptanalytic functions ’ are functions designed to defeat cryptographic mechanisms in order to derive confidential variables or sensitive data, including clear text, passwords or cryptographic keys.,
5D002.a.,‘Software’ specially designed or modified for the ‘development’, ‘production’ or ‘use’ of any of the following: Equipment as follows: Equipment specified in 5A004.a.; Equipment specified in 5A004.b.;,
5D002.c.,‘Software’ having the characteristics of, or performing or simulating the functions of, any of the following: Equipment as follows: Equipment specified in 5A004.a.; Equipment specified in 5A004.b.;,
5E002.a.,Only ‘technology’ for the ‘development’, ‘production’ or ‘use’ of the goods specified in 5A004.a, 5D002.a.3. or 5D002.c.3. above .,
7A117,‘Guidance sets’, usable in ‘missiles’ capable of achieving system accuracy of 3,33 % or less of the range (e.g., a ‘CEP’ of 10 km or less at a range of 300 km),  except ‘ guidance sets ’ designed for missiles with a range under 300 km or manned aircraft . Technical Note: In 7A117 ‘ CEP ’ (Circular Error Probable or Circle of Equal Probability) is a measure of accuracy, defined as the radius of the circle centred at the target, at a specific range, in which 50 % of the payloads impact.,
7B001,Test, calibration or alignment equipment specially designed for equipment specified in 7A117 above . Note: 7B001 does not control test, calibration or alignment equipment for ‘ Maintenance Level I ’ or ‘ Maintenance Level II ’ .,
7B003,Equipment specially designed for the ‘production’ of equipment specified in 7A117 above. ,
7B103,‘Production facilities’ specially designed for equipment specified in 7A117 above .,
7D101,‘Software’ specially designed for the ‘use’ of equipment specified in 7B003 or 7B103 above .,
7E001,‘Technology’ according to the General Technology Note for the ‘development’ of equipment or ‘software’ specified in 7A117, 7B003, 7B103 or 7D101 above .,
7E002,‘Technology’ according to the General Technology Note for the ‘production’ of equipment specified in 7A117, 7B003 and 7B103 above .,
7E101,‘Technology’ according to the General Technology Note for the ‘use’ of equipment specified in 7A117, 7B003, 7B103 and 7D101 above .,
9A004,Space launch vehicles capable of delivering at least a 500 kg payload to a range of at least 300 km . N.B. SEE ALSO 9A104. Note 1: 9A004 does not control payloads.,
9A005,Liquid rocket propulsion systems containing any of the systems or components specified in 9A006 usable for space launch vehicles specified in 9A004 above or sounding rockets specified in 9A104 below . N.B. SEE ALSO 9A105 and 9A119.,
9A007.a.,Solid rocket propulsion systems, usable for space launch vehicles specified in 9A004 above or sounding rockets specified in 9A104 below , with any of the following: N.B. SEE ALSO 9A119. Total impulse capacity exceeding 1,1 MNs;,
9A008.d.,Components, as follows, specially designed for solid rocket propulsion systems: N.B. SEE ALSO 9A108.c. Movable nozzle or secondary fluid injection thrust vector control systems, usable for space launch vehicles specified in 9A004 above or sounding rockets specified in 9A104 below , capable of any of the following: Omni-axial movement exceeding ± 5 o ; Angular vector rotations of 20 o /s or more; or Angular vector accelerations of 40 o /s 2 or more.,
9A104,Sounding rockets, capable of delivering at least a 500 kg payload to a range of at least 300 km. N.B. SEE ALSO 9A004.,
9A105.a.,Liquid propellant rocket engines, as follows: N.B. SEE ALSO 9A119. Liquid propellant rocket engines usable in ‘missiles’, other than those specified in 9A005, integrated, or designed or modified to be integrated, into a liquid propellant propulsion system which has a total impulse capacity equal to or greater than 1,1 MNs having a total impulse capacity equal to or greater than 1,1 MNs;  except liquid propellant apogee engines designed or modified for satellite applications and having all of the following : nozzle throat diameter of 20 mm or less; and 2. combustion chamber pressure of 15 bar or less.,
9A106.c.,Systems or components, other than those specified in 9A006, usable in ‘ missiles ’ , as follows, specially designed for liquid rocket propulsion systems: Thrust vector control sub-systems, except those designed for rocket systems that are not capable of delivering at least a 500 kg payload to a range of at least 300 km . Technical Note: Examples of methods of achieving thrust vector control specified in 9A106.c. are: Flexible nozzle; Fluid or secondary gas injection; Movable engine or nozzle; Deflection of exhaust gas stream (jet vanes or probes); or Thrust tabs.,
9A108.c.,Components, other than those specified in 9A008, usable in ‘ missiles ’ as follows , specially designed for solid rocket propulsion systems: Thrust vector control sub-systems, except those designed for rocket systems that are not capable of delivering at least a 500 kg payload to a range of at least 300 km . Technical Note: Examples of methods of achieving thrust vector control specified in 9A108.c. are: Flexible nozzle; Fluid or secondary gas injection; Movable engine or nozzle; Deflection of exhaust gas stream (jet vanes or probes); or Thrust tabs.,
9A116,Reentry vehicles, usable in ‘missiles’, and equipment designed or modified therefor, as follows,  except for reentry vehicles designed for non-weapon payloads : Reentry vehicles; Heat shields and components therefor fabricated of ceramic or ablative materials; Heat sinks and components therefor fabricated of light-weight, high heat capacity materials; Electronic equipment specially designed for reentry vehicles.,
9A119,Individual rocket stages, usable in complete rocket systems or unmanned aerial vehicles, capable of delivering at least a 500 kg payload to a range of 300 km, other than those specified in 9A005 or 9A007.a. above ,
9B115,Specially designed ‘production equipment’ for the systems, sub-systems and components specified in 9A005, 9A007.a., 9A008.d., 9A105.a., 9A106.c., 9A108.c., 9A116 or 9A119 above .,
9B116,Specially designed ‘production facilities’ for the space launch vehicles specified in 9A004, or systems, sub-systems, and components specified in 9A005, 9A007.a., 9A008.d., 9A104, 9A105.a., 9A106.c., 9A108.c., 9A116 or 9A119 above .,
9D101,‘Software’ specially designed for the ‘use’ of goods specified in 9B116 above .,
9E001,‘Technology’ according to the General Technology Note for the ‘development’ of equipment or ‘software’ specified in 9A004, 9A005, 9A007.a., 9A008.d., 9B115, 9B116 or 9D101 above .,
9E002,‘Technology’ according to the General Technology Note for the ‘production’ of equipment specified in 9A004, 9A005, 9A007.a., 9A008.d., 9B115 or 9B116 above . Note: For ‘ technology ’ for the repair of controlled structures, laminates or materials, see 1E002.f.,
9E101,‘Technology’ according to the General Technology Note for the ‘development’ or ‘production’ of goods specified in 9A104, 9A105.a., 9A106.c., 9A108.c., 9A116 or 9A119 above .,
9E102,‘Technology’ according to the General Technology Note for the ‘use’ of space launch vehicles specified in 9A004, 9A005, 9A007.a., 9A008.d., 9A104, 9A105.a., 9A106.c., 9A108.c., 9A116, 9A119, 9B115, 9B116 or 9D101 above .,
1C351.d.4.,Ricin,
1C351.d.5.,Saxitoxin,
1B226,Electromagnetic isotope separators designed for, or equipped with, single or multiple ion sources capable of providing a total ion beam current of 50 mA or greater. Note: 1B226 includes separators: Capable of enriching stable isotopes; With the ion sources and collectors both in the magnetic field and those configurations in which they are external to the field.,
1B231,Tritium facilities or plants, and equipment therefor, as follows: Facilities or plants for the production, recovery, extraction, concentration, or handling of tritium; Equipment for tritium facilities or plants, as follows: Hydrogen or helium refrigeration units capable of cooling to 23 K (– 250 °C) or less, with heat removal capacity greater than 150 W; Hydrogen isotope storage or hydrogen isotope purification systems using metal hydrides as the storage or purification medium.,
1B233,Lithium isotope separation facilities or plants, and equipment therefor, as follows: Facilities or plants for the separation of lithium isotopes; Equipment for the separation of lithium isotopes, as follows: Packed liquid-liquid exchange columns specially designed for lithium amalgams; Mercury or lithium amalgam pumps; Lithium amalgam electrolysis cells; Evaporators for concentrated lithium hydroxide solution.,
1C012,Materials as follows: Technical Note: These materials are typically used for nuclear heat sources. ‘Previously separated’ neptunium-237 in any form. Note: 1C012.b. does not control shipments with a neptunium-237 content of 1 g or less.,
1C233,Lithium enriched in the lithium-6 ( 6 Li) isotope to greater than its natural isotopic abundance, and products or devices containing enriched lithium, as follows: elemental lithium, alloys, compounds, mixtures containing lithium, manufactures thereof, waste or scrap of any of the foregoing. Note: 1C233 does not control thermoluminescent dosimeters. Technical Note: The natural isotopic abundance of lithium-6 is approximately 6,5 weight per cent (7,5 atom per cent).,
1C235,Tritium, tritium compounds, mixtures containing tritium in which the ratio of tritium to hydrogen atoms exceeds 1 part in 1 000, and products or devices containing any of the foregoing. Note: 1C235 does not control a product or device containing less than 1,48 × 10 3 GBq (40 Ci) of tritium.,
1E001,‘ Technology ’ according to the General Technology Note for the ‘ development ’ or ‘ production ’ of equipment or materials specified in 1C012.b.,
1E201,‘ Technology ’ according to the General Technology Note for the ‘ use ’ of goods specified in 1B226, 1B231, 1B233, 1C233 or 1C235.,
3A228,Switching devices, as follows: Cold-cathode tubes, whether gas filled or not, operating similarly to a spark gap, having all of the following characteristics: Containing three or more electrodes; Anode peak voltage rating of 2,5 kV or more; Anode peak current rating of 100 A or more; and Anode delay time of 10 μs or less; Note:  3A228.a. includes gas krytron tubes and vacuum sprytron tubes. Triggered spark-gaps having both of the following characteristics: An anode delay time of 15 μs or less; and Rated for a peak current of 500 A or more;,
3A231,Neutron generator systems, including tubes, having both of the following characteristics: Designed for operation without an external vacuum system; and Utilizing electrostatic acceleration to induce a tritium-deuterium nuclear reaction.,
3E201,‘Technology’ according to the General Technology Note for the ‘use’ of equipment specified in 3A228 or 3A231 above .,
6A203,Cameras and components, other than those specified in 6A003, as follows: Mechanical rotating mirror streak cameras, as follows, and specially designed components therefor: Streak cameras with writing speeds greater than 0,5 mm per microsecond; Mechanical rotating mirror framing cameras, as follows, and specially designed components therefor: Framing cameras with recording rates greater than 225 000 frames per second; Note: In 6A203.a. components of such cameras include their synchronising electronics units and rotor assemblies consisting of turbines, mirrors and bearings.,
6A225,Velocity interferometers for measuring velocities exceeding 1 km/s during time intervals of less than 10 microseconds. Note: 6A225 includes velocity interferometers such as VISARs (Velocity interferometer systems for any reflector) and DLIs (Doppler laser interferometers).,
6A226,Pressure sensors, as follows: Shock pressure gauges capable of measuring pressures greater than 10 GPa, including gauges made with manganin, ytterbium, and polyvinylidene fluoride (PVDF)/polyvinyl difluoride (PVF 2 ); Quartz pressure transducers for pressures greater than 10 GPa.,
Council Regulation (EC) No 1334/2000,( OJ L 159, 30.6.2000, p. 1 ),
Council Regulation (EC) No 2889/2000,( OJ L 336, 30.12.2000, p. 14 ),
Council Regulation (EC) No 458/2001,( OJ L 65, 7.3.2001, p. 19 ),
Council Regulation (EC) No 2432/2001,( OJ L 338, 20.12.2001, p. 1 ),
Council Regulation (EC) No 880/2002,( OJ L 139, 29.5.2002, p. 7 ),
Council Regulation (EC) No 149/2003,( OJ L 30, 5.2.2003, p. 1 ),
Council Regulation (EC) No 1504/2004,( OJ L 281, 31.8.2004, p. 1 ),
Council Regulation (EC) No 394/2006,( OJ L 74, 13.3.2006, p. 1 ),
Council Regulation (EC) No 1183/2007,( OJ L 278, 22.10.2007, p. 1 ),
Council Regulation (EC) No 1167/2008,( OJ L 325, 3.12.2008, p. 1 ),

Article 1,Article 1,
Article 2, introductory wording,Article 2, introductory wording,
Article 2(a),Article 2(1),
Article 2(b), introductory wording,Article 2(2), introductory wording,
Article 2(b)(i),Article 2(2)(i),
Article 2(b)(ii),Article 2(2)(ii),
Article 2(b)(iii),Article 2(2)(iii),
   ,
Article 2(c)(i),Article 2(3)(i),
Article 2(c)(ii),Article 2(3)(ii),
Article 2(d),Article 2(4),
—,Article 2(5) to (13),
Article 3(1),Article 3(1),
Article 3(2),Article 3(2),
Article 3(3),Article 7,
Article 3(4),—,
Article 4,Article 4,
Article 5,Article 8,
Article 6(1),Article 9(1),
Article 6(2),Article 9(2),
Article 6(3),Article 9(4)(a),
—,Article 9(4)(b),
Article 6(4),Article 9(4)(c),
Article 6(5),Article 9(5),
Article 6(6),Article 9(6),
Article 7,Article 11,
Article 8,Article 12(1),
—,Article 12(2),
Article 9(1),Article 9(2), third subparagraph,
Article 9(2),Article 13(1),
—,Article 13(2),
—,Article 13(3),
—,Article 13(4),
Article 9(3),Article 13(5),
—,Article 13(6),
—,Article 13(7),
Article 10(1),Article 14(1),
Article 10(2),Article 14(2),
Article 10(3),Article 9(4)(b),
Article 11,Article 15(1) and (2),
Article 12,Article 16,
Article 13,Article 17,
Article 14,Article 18,
Article 15(1),Article 19(1),
Article 15(2),Article 19(2),
Article 15(3),Article 19(3),
—,Article 19(4) to (6),
Article 16(1),Article 20(1),
—,Article 20(2),
Article 16(2),Article 20(3),
Article 17,Article 21,
Article 18,Article 23,
Article 19,Article 24,
Article 20,Article 25,
Article 21,Article 22,
Article 22,Article 26,
Article 23,Article 27,
Article 24,Article 28,
Annex I,Annex I,
Annex II Part 1,Annex II Part 1,
Annex II Part 2,Annex II Part 2,
Annex II Part 3(1), (2) and (3),Annex II Part 3(2),
Annex II Part 3(4),Annex II Part 3(1) and (3),
Annex IIIa,Annex IIIa,
Annex IIIb,Annex IIIb,
—,Annex IIIc,
Annex IV,Annex IV,
—,Annex V,
—,Annex VI,